Manufacturer Part Number
HAT2160H-EL-E
Manufacturer
Renesas Electronics Corporation
Introduction
High-performance N-channel power MOSFET for automotive and industrial applications.
Product Features and Performance
Extremely low on-resistance down to 2.6 mΩ
High current capability up to 60A
High power dissipation of 30W
Fast switching speed and low gate charge for efficient operation
Suitable for high-frequency switching applications
Robust design with high ruggedness and reliability
Product Advantages
Excellent efficiency and energy savings
Compact size and high power density
Reliable and durable performance
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 20V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 2.6 mΩ @ 30A, 10V
Continuous Drain Current (Id): 60A @ 25°C
Input Capacitance (Ciss): 7750 pF @ 10V
Power Dissipation (Tc): 30W
Quality and Safety Features
RoHS3 compliant
LFPAK package for improved thermal and electrical performance
Compatibility
Compatible with a wide range of automotive and industrial applications
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
DC-DC converters
Product Lifecycle
Current product
Replacements and upgrades available
Key Reasons to Choose This Product
Extremely low on-resistance for high efficiency
High current capability and power handling
Fast switching and low gate charge for high-frequency operation
Robust and reliable design for demanding applications
Compact LFPAK package for space-constrained designs
RoHS3 compliance for environmental sustainability