Manufacturer Part Number
HAT2164H-EL-E
Manufacturer
Renesas Electronics Corporation
Introduction
High-performance N-channel MOSFET transistor suitable for use in power applications.
Product Features and Performance
Designed for high power applications
Low on-resistance for efficient power conversion
High current handling capability up to 60A
Fast switching speed
Low gate charge for efficient switching
Wide operating temperature range up to 150°C
Product Advantages
Excellent thermal management for high power operation
Efficient power conversion due to low on-resistance
Reliable performance in demanding applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Gate to Source Voltage (Vgs) Max: ±20V
On-Resistance (Rds(on)): 3.1mΩ @ 30A, 10V
Continuous Drain Current (Id): 60A @ 25°C
Input Capacitance (Ciss): 7600pF @ 10V
Power Dissipation (Tc): 30W
Quality and Safety Features
Compliant with RoHS3 environmental standards
Robust LFPAK package for reliable operation
Compatibility
Surface mount package (SC-100, SOT-669)
Compatible with standard PCB assembly processes
Application Areas
Suitable for high power switching applications
Ideal for power supplies, motor drives, and industrial electronics
Product Lifecycle
Current production, no plans for discontinuation
Replacement parts and upgrades available from Renesas
Key Reasons to Choose This Product
Excellent power handling and thermal performance
Industry-leading low on-resistance for efficient power conversion
Reliable operation in demanding applications
Compatibility with standard manufacturing processes
Availability of replacement parts and upgrades
