Manufacturer Part Number
SI7686DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
This product is a discrete semiconductor component, specifically a single N-channel MOSFET transistor.
Product Features and Performance
Supports a wide operating temperature range of -55°C to 150°C
High drain-to-source voltage of up to 30V
Low on-resistance of 9.5 mOhm at 13.8A and 10V
High continuous drain current of 35A at 25°C case temperature
Low input capacitance of 1220 pF at 15V
High power dissipation of up to 37.9W at 25°C case temperature
Product Advantages
Efficient power switching performance
Compact surface mount package
Wide temperature range capability
Suitable for various power management and control applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Gate-to-Source Voltage (Vgs): ±20V
Drain Current (Id): 35A (continuous)
On-Resistance (Rds(on)): 9.5 mOhm
Input Capacitance (Ciss): 1220 pF
Power Dissipation (Tc): 37.9W
Quality and Safety Features
RoHS3 compliant
Reliable MOSFET technology
Compatibility
Compatible with PowerPAK SO-8 package
Suitable for Tape & Reel (TR) packaging
Application Areas
Power management and control systems
Motor drives
Switching power supplies
Lighting and industrial automation
Automotive electronics
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgraded options may be available in the future.
Key Reasons to Choose This Product
Excellent power switching performance with low on-resistance and high current capability
Wide operating temperature range for versatile applications
Compact surface mount package for space-constrained designs
Reliable MOSFET technology with RoHS3 compliance for quality assurance
Compatibility with common packaging options for easy integration
SI7688DP-T1-GE3Electro-Films (EFI) / Vishay