SI7686DP-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI7686DP-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

N-Channel MOSFET Transistor

Product Features and Performance

Designed for high-speed switching and efficiency in power supply, motor control, and other power conversion applications

Low on-resistance and fast switching speed for improved efficiency

Rugged and reliable construction for high performance and long-term reliability

Product Advantages

Optimized for high-frequency, high-efficiency power conversion

Excellent thermal and electrical performance

Compact and space-saving Surface Mount package

Key Technical Parameters

Drain to Source Voltage (Vdss): 30 V

Vgs (Max): ±20V

Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.8A, 10V

Current Continuous Drain (Id) @ 25°C: 35A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V

Power Dissipation (Max): 5W (Ta), 37.9W (Tc)

Vgs(th) (Max) @ Id: 3V @ 250A

Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V

Quality and Safety Features

Compliant with RoHS3 regulations

Reliable and robust construction for high performance and long-term use

Compatibility

Compatible with a wide range of power supply, motor control, and other power conversion applications

Application Areas

Power supplies

Motor drives

Power conversion systems

Industrial and consumer electronics

Product Lifecycle

Currently in production

Replacements and upgrades available from Vishay

Key Reasons to Choose This Product

Optimized for high-efficiency, high-frequency power conversion

Excellent thermal and electrical performance

Compact and space-saving surface mount package

Reliable and robust construction for long-term use

Compatibility with a wide range of power applications