Manufacturer Part Number
SI7703EDN-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor FETs, MOSFETs
Product Features and Performance
RoHS3 Compliant
PowerPAK 1212-8 Package
Surface Mount Mounting
TrenchFET Series
Tape & Reel Packaging
Operating Temperature: -55°C to 150°C
Drain-Source Voltage (Vdss): 20V
Gate-Source Voltage (Vgs) Max: ±12V
On-Resistance (Rds(on)) Max: 48mΩ @ 6.3A, 4.5V
MOSFET Technology
Continuous Drain Current (Id) Max: 4.3A @ 25°C
Schottky Diode (Isolated)
Power Dissipation Max: 1.3W @ 25°C
P-Channel FET Type
Threshold Voltage (Vgs(th)) Max: 1V @ 800μA
Drive Voltage Range: 1.8V (Max Rds(on)) to 4.5V (Min Rds(on))
Gate Charge (Qg) Max: 18nC @ 4.5V
Product Advantages
High performance MOSFET in compact PowerPAK package
Optimized for efficient power conversion and control
Wide operating temperature range
Key Technical Parameters
Drain-Source Voltage (Vdss)
Gate-Source Voltage (Vgs)
On-Resistance (Rds(on))
Continuous Drain Current (Id)
Power Dissipation
Quality and Safety Features
RoHS3 Compliant
Wide operating temperature range
Compatibility
Surface mount applications
Application Areas
Power conversion and control circuits
Motor drives
Switching regulators
Battery management systems
Product Lifecycle
Currently in production
Replacement/upgrade options available
Key Reasons to Choose This Product
Compact, high-performance MOSFET
Efficient power conversion and control
Wide operating temperature range
RoHS3 compliance for environmental safety
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