DN3135N8-G - Microchip Technology

Manufacturer Part Number

DN3135N8-G

Manufacturer

Microchip Technology

Introduction

Discrete Semiconductor Product

Single N-Channel MOSFET Transistor

Product Features and Performance

High-voltage MOSFET with 350V drain-source voltage rating

Low on-resistance of 35Ω @ 150mA, 0V

Capable of handling up to 135mA continuous drain current at 25°C

Input capacitance of 120pF @ 25V

Operates over a wide temperature range of -55°C to 150°C

Product Advantages

Suitable for high-voltage, high-power applications

Excellent power efficiency with low on-resistance

Wide operating temperature range for versatile use

Key Technical Parameters

Drain-Source Voltage (Vdss): 350V

Gate-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 35Ω @ 150mA, 0V

Continuous Drain Current (Id): 135mA (at 25°C)

Input Capacitance (Ciss): 120pF @ 25V

Quality and Safety Features

RoHS3 compliant

Reliable and durable MOSFET design

Compatibility

Surface mount package (TO-243AA/SOT-89)

Compatible with a wide range of high-voltage, high-power applications

Application Areas

Switching power supplies

Motor drivers

Industrial control systems

Automotive electronics

Household appliances

Product Lifecycle

Current product, not nearing discontinuation

Replacements and upgrades may be available from Microchip Technology

Key Reasons to Choose This Product

High voltage and power handling capabilities

Excellent power efficiency with low on-resistance

Wide operating temperature range for versatile use

RoHS3 compliance for environmental sustainability

Reliable and durable MOSFET design

Compatibility with a wide range of high-voltage, high-power applications