Manufacturer Part Number
CSD16414Q5
Manufacturer
Texas Instruments
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
N-Channel MOSFET
25V Drain to Source Voltage
+16V, -12V Gate to Source Voltage
9mOhm Max On-Resistance @ 30A, 10V
3650pF Max Input Capacitance @ 12.5V
34A Continuous Drain Current @ 25°C (Ta)
100A Continuous Drain Current @ 25°C (Tc)
2W Max Power Dissipation @ 25°C (Ta)
2V Max Gate Threshold Voltage @ 250A
21nC Max Gate Charge @ 4.5V
Product Advantages
High performance NexFET technology
Efficient power conversion
Compact 8-VSON-CLIP (5x6) package
Key Technical Parameters
Drain to Source Voltage: 25V
Gate to Source Voltage: +16V, -12V
On-Resistance: 1.9mOhm Max
Continuous Drain Current: 34A (Ta), 100A (Tc)
Input Capacitance: 3650pF Max
Power Dissipation: 3.2W Max
Gate Threshold Voltage: 2V Max
Gate Charge: 21nC Max
Quality and Safety Features
RoHS3 Compliant
Operating Temperature: -55°C to 150°C
Compatibility
Surface Mount Mounting
Application Areas
Power conversion
Motor drives
Industrial and consumer electronics
Product Lifecycle
Current product, no known discontinuation
Key Reasons to Choose
High performance NexFET technology
Low on-resistance for efficient power conversion
High current capability
Compact package
Wide temperature range
