Manufacturer Part Number
CSD16570Q5BT
Manufacturer
Texas Instruments
Introduction
High-performance N-channel NexFET power MOSFET
Product Features and Performance
Low on-resistance for high efficiency
High current capability up to 100A
Wide operating temperature range of -55°C to 150°C
Low input capacitance for high-speed switching
High power dissipation up to 195W
Product Advantages
Excellent thermal management
Compact 8-PowerTDFN package
RoHS3 compliant
Key Technical Parameters
Drain to Source Voltage (Vdss): 25V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 0.59mΩ @ 50A, 10V
Continuous Drain Current (Id): 100A
Input Capacitance (Ciss): 14000pF @ 12V
Power Dissipation (Max): 3.2W (Ta), 195W (Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Suitable for various power management and motor control applications
Application Areas
Power supplies
Synchronous rectification
Motor drives
Inverters
Welding equipment
Industrial automation
Product Lifecycle
Currently in active production
No discontinuation or end-of-life plans
Several Key Reasons to Choose This Product
Excellent power efficiency and thermal management
High current capability and low on-resistance
Wide operating temperature range
Compact and RoHS3 compliant package
Suitable for a variety of power management and motor control applications
