Manufacturer Part Number
CSD16415Q5
Manufacturer
Texas Instruments
Introduction
High-performance N-channel power MOSFET in a small 8-PowerTDFN package
Part of the NexFET product series
Product Features and Performance
Operates in the temperature range of -55°C to 150°C
Drain-to-Source voltage (Vdss) of 25V
Gate-to-Source voltage (Vgs) range of +16V to -12V
Very low on-resistance (Rds(on)) of 1.15mΩ at 40A, 10V
Continuous Drain Current (Id) of 100A at 25°C
Low input capacitance (Ciss) of 4100pF at 12.5V
Maximum Power Dissipation (Pd) of 3.2W at 25°C
Product Advantages
Excellent thermal and electrical performance in a compact package
Suitable for high-current, high-efficiency power conversion applications
Low on-resistance for improved energy efficiency
Wide operating temperature range for diverse applications
Key Technical Parameters
MOSFET Technology: N-Channel
Threshold Voltage (Vgs(th)): 1.9V at 250A
Drive Voltage Range: 4.5V (min Rds(on)) to 10V (max Rds(on))
Gate Charge (Qg): 29nC at 4.5V
Quality and Safety Features
RoHS3 compliant
Suitable for lead-free and halogen-free applications
Compatibility
Surface mount package (8-PowerTDFN)
Compatible with standard SMT assembly processes
Application Areas
High-efficiency power conversion
Motor drives
Switch-mode power supplies
Inverters
Industrial and automotive electronics
Product Lifecycle
Current production model
No immediate plans for discontinuation
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
Exceptional electrical and thermal performance in a compact package
Highly efficient power conversion with low on-resistance
Versatile operating temperature range for diverse applications
Compatibility with standard surface mount assembly processes
RoHS3 compliance for use in lead-free and halogen-free environments
