Manufacturer Part Number
CSD16411Q3
Manufacturer
Texas Instruments
Introduction
The CSD16411Q3 is a high-performance, low on-resistance, N-channel MOSFET transistor designed for efficient power conversion and switching applications.
Product Features and Performance
Low on-resistance of 10 mOhm at 10V gate-to-source voltage
High continuous drain current of 14A at 25°C ambient temperature
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge of 3.8 nC at 4.5V
High drain-to-source voltage of 25V
Surface mount 8-VSONP (3x3.15) package
Product Advantages
Excellent efficiency and power density for power conversion designs
Robust performance across a wide temperature range
Compact, space-saving surface mount package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 25V
Gate-to-Source Voltage (Vgs): +16V/-12V
On-Resistance (Rds(on)): 10 mOhm @ 10A, 10V
Continuous Drain Current (Id): 14A @ 25°C, 56A @ 100°C
Input Capacitance (Ciss): 570 pF @ 12.5V
Power Dissipation (Pd): 2.7W @ 25°C
Quality and Safety Features
RoHS3 compliant
Manufactured by Texas Instruments, a leading semiconductor company
Compatibility
The CSD16411Q3 is a direct replacement for other N-channel MOSFET transistors in similar power conversion and switching applications.
Application Areas
Efficient power conversion in industrial, automotive, and consumer electronics
High-performance switching in power supplies, motor drives, and inverters
Product Lifecycle
The CSD16411Q3 is an actively supported and commercially available product from Texas Instruments. There are no plans for discontinuation, and replacement or upgrade options are readily available.
Key Reasons to Choose This Product
Excellent efficiency and power density for power conversion designs
Robust performance across a wide temperature range
Compact, space-saving surface mount package
RoHS3 compliance and high-quality manufacturing by Texas Instruments
Direct replacement for other N-channel MOSFET transistors in similar applications
