Manufacturer Part Number
CSD16413Q5A
Manufacturer
Texas Instruments
Introduction
High-performance N-channel NexFET power MOSFET for high-efficiency power conversion applications
Product Features and Performance
Efficient power conversion with low on-resistance and high switching performance
Suitable for use in a wide range of applications, including DC/DC converters, motor drives, and power supplies
Robust design with excellent thermal and electrical characteristics
Product Advantages
Extremely low on-resistance for high-efficiency power conversion
Fast switching speed for improved system performance
Compact package for space-saving designs
Excellent thermal dissipation for reliable operation
Key Technical Parameters
Drain to Source Voltage (Vdss): 25 V
Gate-Source Voltage (Vgs): +16 V, -12 V
On-Resistance (Rds(on)): 3.9 mΩ @ 24 A, 10 V
Continuous Drain Current (Id): 24 A (Ta), 100 A (Tc)
Input Capacitance (Ciss): 1780 pF @ 12.5 V
Power Dissipation (Max): 3.1 W (Ta)
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
Suitable for a wide range of power conversion applications
Application Areas
DC/DC converters
Motor drives
Power supplies
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent power conversion efficiency with low on-resistance
Fast switching speed for improved system performance
Compact package for space-saving designs
Robust design with excellent thermal and electrical characteristics
Reliable and safe operation
