Manufacturer Part Number
CSD16570Q5B
Manufacturer
Texas Instruments
Introduction
High-performance power MOSFET with NexFET technology for efficient power conversion applications.
Product Features and Performance
Low on-resistance (RDS(on)) of 0.59 mΩ for high efficiency
High current capability of 100A continuous drain current
Wide operating temperature range of -55°C to 150°C
Fast switching characteristics for high-frequency operation
Low gate charge (Qg) of 250 nC for efficient driving
Product Advantages
Excellent thermal management and power density
Reduced conduction and switching losses for improved efficiency
Reliable performance in high-temperature environments
Compact package design for space-constrained applications
Key Technical Parameters
Drain-to-Source Voltage (VDS): 25V
Gate-to-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 0.59 mΩ @ 50A, 10V
Continuous Drain Current (ID): 100A
Input Capacitance (Ciss): 14,000 pF @ 12V
Power Dissipation (PD): 3.2W (Ta), 195W (Tc)
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
Suitable for a wide range of power conversion applications, including DC-DC converters, motor drives, and power supplies.
Application Areas
High-efficiency power conversion
Industrial and automotive electronics
Telecom and server power systems
Renewable energy systems
Product Lifecycle
Currently available product
Replacement options and upgrades may be available, check with Texas Instruments for the latest information.
Key Reasons to Choose This Product
Excellent power efficiency and thermal management
High current capability and wide operating temperature range
Fast switching characteristics for high-frequency operation
Compact package design for space-constrained applications
Reliable and safe performance under various operating conditions
