Manufacturer Part Number
CSD16412Q5A
Manufacturer
Texas Instruments
Introduction
High-performance N-channel NexFET power MOSFET
Product Features and Performance
25V drain-source voltage
Low on-resistance (11mΩ max @ 10A, 10V)
High current capability (14A continuous, 52A pulsed)
Low gate charge (3.8nC max @ 4.5V)
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Excellent power density and efficiency
Improved system reliability and performance
Reduced power losses and heat generation
Key Technical Parameters
Drain-source voltage (Vdss): 25V
Gate-source voltage (Vgs): +16V/-12V
On-resistance (Rds(on)): 11mΩ max @ 10A, 10V
Continuous drain current (Id): 14A (Ta), 52A (Tc)
Input capacitance (Ciss): 530pF max @ 12.5V
Power dissipation (Pd): 3W (Ta)
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with various power supply and motor control systems
Application Areas
Switch-mode power supplies
Motor drives
Industrial and automotive electronics
Product Lifecycle
Active product
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent power efficiency and performance
Reliable and robust design for demanding applications
Optimized for high-density, high-power systems
Wide operating temperature range for versatile use
