Manufacturer Part Number
CSD16409Q3
Manufacturer
Texas Instruments
Introduction
The CSD16409Q3 is a high-performance N-channel MOSFET transistor from Texas Instruments' NexFET series.
Product Features and Performance
Low on-resistance (Rds(on)) of 8.2 mOhm @ 17A, 10V
High continuous drain current (Id) of 15A (Ta) and 60A (Tc)
Wide operating temperature range of -55°C to 150°C (TJ)
Low input capacitance (Ciss) of 800 pF @ 12.5V
Maximum power dissipation of 2.6W (Ta)
Product Advantages
Excellent efficiency and performance
Compact 8-VSONP (5x6) package
Suitable for high-power, high-frequency switching applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 25V
Gate-Source Voltage (Vgs): +16V/-12V
Gate Charge (Qg): 5.6nC @ 4.5V
Threshold Voltage (Vgs(th)): 2.3V @ 250A
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging
Compatibility
The CSD16409Q3 is compatible with a wide range of high-power, high-frequency switching applications.
Application Areas
Power supplies
Motor drives
Inverters
Industrial and automotive electronics
Product Lifecycle
The CSD16409Q3 is an active product and is not nearing discontinuation. Replacement or upgrade options may be available.
Key Reasons to Choose This Product
Excellent efficiency and performance
Compact and space-saving package
Suitable for a wide range of high-power, high-frequency switching applications
Proven reliability and quality from Texas Instruments
