Manufacturer Part Number
CSD17306Q5A
Manufacturer
Texas Instruments
Introduction
The CSD17306Q5A is a high-performance N-channel MOSFET from Texas Instruments' NexFET series, designed for a wide range of power management and switching applications.
Product Features and Performance
30V drain-to-source voltage rating
7mΩ maximum on-resistance at 22A, 8V gate-to-source voltage
24A continuous drain current at 25°C ambient temperature
100A continuous drain current at 25°C case temperature
2170pF maximum input capacitance at 15V drain-to-source voltage
2W maximum power dissipation at 25°C ambient temperature
Operating temperature range of -55°C to 150°C
Product Advantages
Low on-resistance for high efficiency
High current capability for demanding applications
Compact 8-VSONP (5x6) package for space-constrained designs
RoHS3 compliant for environmental compliance
Key Technical Parameters
Drain-to-source voltage (Vdss): 30V
Gate-to-source voltage (Vgs): +10V, -8V
On-resistance (Rds(on)): 3.7mΩ @ 22A, 8V
Continuous drain current (Id): 24A (Ta), 100A (Tc)
Input capacitance (Ciss): 2170pF @ 15V
Power dissipation (Pd): 3.2W (Ta)
Quality and Safety Features
Compliance with RoHS3 environmental standards
Robust design for reliable operation
Compatibility
Compatible with a wide range of power management and switching applications
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
General power management applications
Product Lifecycle
Currently in production
No discontinuation or replacement plans announced
Key Reasons to Choose This Product
Excellent performance-to-size ratio with low on-resistance and high current capability
Compact and space-saving 8-VSONP (5x6) package
RoHS3 compliance for environmental friendliness
Robust design and wide operating temperature range for reliable operation
Compatibility with a broad range of power management and switching applications
