Manufacturer Part Number
CSD17310Q5A
Manufacturer
Texas Instruments
Introduction
The CSD17310Q5A is a high-performance N-channel MOSFET transistor from Texas Instruments, designed for power management and control applications.
Product Features and Performance
30V drain-to-source voltage capability
Ultra-low on-resistance of 5.1mΩ @ 20A, 8V
High continuous drain current of 21A at 25°C ambient temperature
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge of 11.6nC @ 4.5V
Advanced NexFET technology for high efficiency and superior performance
Product Advantages
Excellent thermal management with low power dissipation of 3.1W
Robust and reliable design for harsh environments
Optimized for high-frequency, high-efficiency power conversion
Compact 8-VSONP (5x6) package for space-constrained applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Gate-to-Source Voltage (Vgs): +10V/-8V
Drain Current (Id): 21A (Ta), 100A (Tc)
On-Resistance (Rds(on)): 5.1mΩ @ 20A, 8V
Input Capacitance (Ciss): 1560pF @ 15V
Gate Charge (Qg): 11.6nC @ 4.5V
Quality and Safety Features
RoHS3 compliant
Robust design for high reliability and long lifespan
Compatibility
Suitable for a wide range of power management and control applications
Application Areas
Switch-mode power supplies (SMPS)
Motor drives
Power inverters and converters
Industrial and consumer electronics
Product Lifecycle
The CSD17310Q5A is a currently available and actively supported product from Texas Instruments.
Replacement or upgrade options may be available as technology evolves.
Key Reasons to Choose This Product
Exceptional performance with ultra-low on-resistance and high current capability
Compact and thermally efficient design for space-constrained applications
Robust and reliable operation in harsh environments
Optimized for high-frequency, high-efficiency power conversion
Backed by the reputation and support of Texas Instruments
