Manufacturer Part Number
CSD17313Q2T
Manufacturer
Texas Instruments
Introduction
Discrete Semiconductor Product
N-Channel MOSFET Transistor
Product Features and Performance
30V Drain-Source Voltage (Vdss)
+10V/-8V Gate-Source Voltage (Vgs)
30mΩ On-Resistance (Rds(on)) @ 4A, 8V
5A Continuous Drain Current (Id) @ 25°C
340pF Input Capacitance (Ciss) @ 15V
4W Power Dissipation (Ta), 17W (Tc)
-55°C to 150°C Operating Temperature Range
Product Advantages
High Efficiency NexFET Technology
Low On-Resistance for Improved Performance
Wide Temperature Range Operation
Small 6-WSON (2x2) Package
Key Technical Parameters
MOSFET Technology
N-Channel FET Type
8V Gate Threshold Voltage (Vgs(th)) @ 250μA
3V/8V Drive Voltage (Rds(on) Max/Min)
7nC Gate Charge (Qg) @ 4.5V
Quality and Safety Features
RoHS3 Compliant
Qualified to Automotive Standards
Compatibility
Suitable for Surface Mount Applications
Application Areas
Power Management
Motor Control
Lighting
Industrial Electronics
Product Lifecycle
Active Product
Replacements and Upgrades Available
Key Reasons to Choose
High Efficiency and Low On-Resistance
Wide Temperature Range Capability
Small Footprint 6-WSON Package
Automotive-Grade Quality and Reliability
Proven NexFET Technology
