Manufacturer Part Number
CSD17381F4T
Manufacturer
Texas Instruments
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
Ultra-low on-resistance FET
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 195 pF
Low gate charge of 1.35 nC
Product Advantages
Excellent power efficiency
Compact size for space-constrained designs
Reliable performance across a wide temperature range
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Maximum Gate-Source Voltage (Vgs): 12V
On-Resistance (Rds(on)): 109 mOhm
Continuous Drain Current (Id): 3.1A
Power Dissipation (Pd): 500 mW
Quality and Safety Features
RoHS3 compliant
3-PICOSTAR package for surface mount
Compatibility
Compatible with a variety of electronic circuits and systems
Application Areas
Suitable for use in power management, switching, and control applications
Product Lifecycle
Currently in production, no plans for discontinuation
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
Compact size and surface mount package for space-constrained designs
Reliable operation across a wide temperature range
Optimal balance of on-resistance, current handling, and gate charge
