Manufacturer Part Number
CSD17501Q5A
Manufacturer
Texas Instruments
Introduction
High-performance N-channel MOSFET with low on-resistance and fast switching
Product Features and Performance
Very low on-resistance of 2.9 milliohms at 25A, 10V
100A continuous drain current (Tc) capability
High drain-to-source voltage rating of 30V
Wide operating temperature range of -55°C to 150°C
Fast switching with low gate charge of 17nC at 4.5V
Product Advantages
Excellent power efficiency due to ultra-low on-resistance
High current handling capability
Suitable for high-frequency, high-power density switching applications
Robust operating temperature range
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Maximum Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 2.9 milliohms @ 25A, 10V
Continuous Drain Current (Id): 100A (Tc)
Input Capacitance (Ciss): 2630pF @ 15V
Power Dissipation (Pd): 3.2W (Ta)
Quality and Safety Features
RoHS3 compliant
Suitable for various safety-critical applications
Compatibility
Compatible with standard MOSFET drivers and controllers
Application Areas
High-frequency, high-power density switching applications
Inductive switching applications (e.g., motors, DC-DC converters)
Automotive, industrial, and consumer electronics
Product Lifecycle
This product is currently in active production and availability is good.
Replacements or upgrades may become available in the future as technology evolves.
Several Key Reasons to Choose This Product
Excellent power efficiency and high current handling capability due to ultra-low on-resistance
Fast switching performance with low gate charge for high-frequency applications
Robust operating temperature range for use in diverse environments
Compatibility with standard MOSFET drivers and controllers for easy integration
RoHS3 compliance for safety-critical applications
