Manufacturer Part Number
CSD17318Q2
Manufacturer
Texas Instruments
Introduction
N-channel MOSFET transistor designed for high-performance power management applications
Product Features and Performance
Supports continuous drain current of up to 25A at 25°C
Low on-resistance (RDS(on)) of 15.1mΩ @ 8A, 8V
Wide operating temperature range of -55°C to 150°C
High input capacitance (Ciss) of 879pF @ 15V
Maximum power dissipation of 16W at case temperature (Tc)
Gate voltage (Vgs) range of ±10V
Product Advantages
Excellent thermal performance and power handling capability
Suitable for high-current, high-efficiency power conversion applications
Compact 6-WSON (2x2) package for space-constrained designs
Key Technical Parameters
Drain-to-Source Voltage (VDS): 30V
Gate Threshold Voltage (Vgs(th)): 1.2V @ 250A
Gate Charge (Qg): 6nC @ 4.5V
Drive Voltage Range: 2.5V (min RDS(on)) to 8V (max RDS(on))
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments with wide temperature range
Compatibility
Can be used in a variety of power management applications, such as DC-DC converters, motor drives, and power amplifiers
Application Areas
High-performance power management
Industrial and automotive electronics
Energy-efficient power conversion systems
Product Lifecycle
Currently in production, no known discontinuation plans
Replacement or upgrade options may be available from Texas Instruments
Key Reasons to Choose This Product
Excellent power handling and thermal performance
Compact package for space-constrained designs
Wide operating temperature range and RoHS compliance
Suitable for high-efficiency, high-current power conversion applications
Support from a reputable manufacturer (Texas Instruments) with a wide portfolio of power management solutions
