Manufacturer Part Number
CSD15380F3
Manufacturer
Texas Instruments
Introduction
High-performance N-channel MOSFET transistor
Part of the FemtoFET series
Product Features and Performance
Low on-resistance of 1.19 Ω (max) at 100 mA, 8 V
Low input capacitance of 10.5 pF (max) at 10 V
Low gate charge of 0.281 nC (max) at 10 V
Continuous drain current of 500 mA at 25°C
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent performance in a compact 3-PICOSTAR package
Suitable for high-frequency and high-efficiency applications
Low power dissipation of 500 mW (max)
Key Technical Parameters
Drain to Source Voltage (Vdss): 20 V
Gate to Source Voltage (Vgs): 10 V (max)
Threshold Voltage (Vgs(th)): 1.35 V (max) at 2.5 A
Drive Voltage: 2.8 V (min Rds(on)), 8 V (max Rds(on))
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering
Compatibility
Surface mount package for easy integration
Application Areas
Suitable for various power management and switching applications
Ideal for high-frequency, high-efficiency circuits
Product Lifecycle
This product is currently in production and widely available
Replacement or upgrade options may be available in the future
Several Key Reasons to Choose This Product
Excellent performance characteristics, including low on-resistance, low input capacitance, and low gate charge
Compact 3-PICOSTAR package for efficient use of board space
Wide operating temperature range for versatile applications
RoHS3 compliance for environmentally-friendly use
Reliable and widely available from Texas Instruments