Manufacturer Part Number
CSD13306W
Manufacturer
Texas Instruments
Introduction
Discrete Semiconductor Product
Transistors - FETs, MOSFETs - Single
Product Features and Performance
RoHS3 Compliant
6-DSBGA (1x1.5) Manufacturer's Packaging
Base Product Number: CSD13306
Package / Case: 6-UFBGA, DSBGA
Supplier Device Package: 6-DSBGA (1x1.5)
Series: NexFET
Package: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 1.5A, 4.5V
Technology: MOSFET (Metal Oxide)
Current Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 6 V
Power Dissipation (Max): 1.9W (Ta)
FET Type: N-Channel
Vgs(th) (Max) @ Id: 1.3V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V
Mounting Type: Surface Mount
Product Advantages
Efficient power management
High power density
Reliable performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 12 V
Continuous Drain Current (Id) @ 25°C: 3.5A
On-State Resistance (Rds(on)) @ Id, Vgs: 10.2mOhm @ 1.5A, 4.5V
Gate Charge (Qg) @ Vgs: 11.2 nC @ 4.5 V
Quality and Safety Features
RoHS3 Compliant
Wide Operating Temperature Range: -55°C to 150°C
Compatibility
Suitable for a variety of power management applications
Application Areas
Power conversion
Motor control
Industrial electronics
Consumer electronics
Product Lifecycle
Currently available
No information on discontinuation or replacement
Key Reasons to Choose This Product
Efficient power management with low on-state resistance
High power density and reliable performance
Wide operating temperature range
Suitable for a variety of power management applications