Manufacturer Part Number
CSD13381F4
Manufacturer
Texas Instruments
Introduction
High-performance N-channel NexFET power MOSFET
Product Features and Performance
Low on-resistance for high efficiency
Fast switching speed
High power density
Optimized for DC/DC converters, motor drives, and power supplies
Product Advantages
Excellent thermal performance
Robust design
High reliability
Key Technical Parameters
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): 8 V
Rds On (Max) @ Id, Vgs: 180 mOhm @ 500 mA, 4.5 V
Current Continuous Drain (Id) @ 25°C: 2.1 A
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 6 V
Power Dissipation (Max): 500 mW
Vgs(th) (Max) @ Id: 1.1 V @ 250 A
Drive Voltage (Max Rds On, Min Rds On): 1.8 V, 4.5 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Quality and Safety Features
RoHS3 compliant
Reliable and robust design
Compatibility
Suitable for a wide range of applications, including DC/DC converters, motor drives, and power supplies
Application Areas
Ideal for use in power management, motor control, and industrial electronics applications
Product Lifecycle
Currently available, no discontinuation or replacement planned
Key Reasons to Choose This Product
Excellent performance, efficiency, and reliability
Optimized for power-critical applications
Robust and RoHS-compliant design
Broad compatibility and suitability for various applications