Manufacturer Part Number
CSD13302W
Manufacturer
Texas Instruments
Introduction
High-performance N-channel NexFET MOSFET in a compact 4-DSBGA package.
Product Features and Performance
Low on-resistance for efficient power conversion
High current capability up to 1.6A
Low gate charge for fast switching
Wide operating temperature range of -55°C to 150°C
Compact 4-DSBGA package
Product Advantages
Excellent power efficiency
Small footprint for space-constrained designs
Reliable operation in harsh environments
Key Technical Parameters
Drain to Source Voltage (Vdss): 12V
On-resistance (Rds_on): 17.1mΩ @ 1A, 4.5V
Continuous Drain Current (Id): 1.6A
Input Capacitance (Ciss): 862pF @ 6V
Power Dissipation (Max): 1.8W
Quality and Safety Features
RoHS3 compliant
Reliable MOSFET technology
Compatibility
Suitable for various power conversion and control applications
Application Areas
Switching power supplies
Motor drives
DC/DC converters
Inverters
Product Lifecycle
Current product, no discontinuation plans
Key Reasons to Choose This Product
Excellent power efficiency and performance
Compact and space-saving design
Wide operating temperature range for reliable operation
RoHS3 compliance for environmental friendliness