CSD13306WT - Texas Instruments

Manufacturer Part Number

CSD13306WT

Manufacturer

Texas Instruments

Introduction

High-performance N-channel power MOSFET in a miniature 6-DSBGA (1x1.5) package

Product Features and Performance

RoHS3 compliant

NexFET technology for high efficiency and low on-resistance

Optimized for high-density, high-frequency power conversion applications

Operates at up to 150°C junction temperature

Low gate charge and input capacitance for efficient switching

Product Advantages

Extremely small and thin package for space-constrained designs

High power density and efficiency

Reliable and robust performance

Key Technical Parameters

Drain to Source Voltage (Vdss): 12V

Maximum Gate-Source Voltage (Vgs): ±10V

On-Resistance (Rds(on)): 10.2mΩ @ 1.5A, 4.5V

Continuous Drain Current (Id): 3.5A @ 25°C

Input Capacitance (Ciss): 1370pF @ 6V

Power Dissipation (Max): 1.9W @ 25°C

Quality and Safety Features

MOSFET technology for reliable and stable operation

RoHS3 compliant for environmental responsibility

Compatibility

Surface mount package for easy integration into various circuit designs

Application Areas

High-density, high-frequency power conversion applications

Automotive electronics

Industrial and consumer electronics

Product Lifecycle

Current production, no plans for discontinuation

Replacements and upgrades available as technology advances

Key Reasons to Choose This Product

Extremely compact and space-saving package

High efficiency and low on-resistance for improved power density

Reliable and robust performance across a wide temperature range

Suitable for a variety of high-frequency power conversion applications