Manufacturer Part Number
CSD13303W1015
Manufacturer
Texas Instruments
Introduction
High-performance NexFET N-Channel MOSFET
Product Features and Performance
12V Drain-Source Voltage
31A Continuous Drain Current
20mOhm On-Resistance
-55°C to 150°C Operating Temperature
715pF Input Capacitance
65W Power Dissipation
Product Advantages
Excellent power efficiency
Compact 6-DSBGA packaging
Suitable for high-frequency and high-current applications
Key Technical Parameters
Vdss: 12V
Vgs(max): ±8V
Rds(on): 20mOhm @ 1.5A, 4.5V
Id: 31A @ 25°C
Ciss: 715pF @ 6V
Pd: 1.65W
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
Industry-standard MOSFET package and pinout
Application Areas
Power conversion
Motor control
Wireless and telecom infrastructure
Industrial and consumer electronics
Product Lifecycle
Current production status
Replacement or upgrade options may be available
Key Reasons to Choose
Excellent power efficiency and performance
Compact and space-saving 6-DSBGA package
Suitable for high-frequency and high-current applications
Reliable and safe operation