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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleCSD13303W1015
CSD13303W1015 Image
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See specifications for product details.

CSD13303W1015 - Texas Instruments

Manufacturer Part Number
CSD13303W1015
Manufacturer
Texas Instruments
Allelco Part Number
32D-CSD13303W1015
ECAD Model
Parts Description
MOSFET N-CH 12V 31A 6DSBGA
Detailed Description
Package
6-UFBGA, DSBGA
Data sheet
CSD13303W1015.pdf
RoHs Status
ROHS3 Compliant
In stock: 165520

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Specifications

CSD13303W1015 Tech Specifications
Texas Instruments - CSD13303W1015 technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments - CSD13303W1015

Product Attribute Attribute Value  
Manufacturer Texas Instruments  
Vgs(th) (Max) @ Id 1.2V @ 250µA  
Vgs (Max) ±8V  
Technology MOSFET (Metal Oxide)  
Supplier Device Package 6-DSBGA (1x1.5)  
Series NexFET™  
Rds On (Max) @ Id, Vgs 20mOhm @ 1.5A, 4.5V  
Power Dissipation (Max) 1.65W (Ta)  
Package / Case 6-UFBGA, DSBGA  
Package Tape & Reel (TR)  
Product Attribute Attribute Value  
Operating Temperature -55°C ~ 150°C (TJ)  
Mounting Type Surface Mount  
Input Capacitance (Ciss) (Max) @ Vds 715 pF @ 6 V  
Gate Charge (Qg) (Max) @ Vgs 4.7 nC @ 4.5 V  
FET Type N-Channel  
FET Feature -  
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V  
Drain to Source Voltage (Vdss) 12 V  
Current - Continuous Drain (Id) @ 25°C 31A (Ta)  
Base Product Number CSD13303  

Parts Introduction

Manufacturer Part Number

CSD13303W1015

Manufacturer

Texas Instruments

Introduction

High-performance NexFET N-Channel MOSFET

Product Features and Performance

12V Drain-Source Voltage

31A Continuous Drain Current

20mOhm On-Resistance

-55°C to 150°C Operating Temperature

715pF Input Capacitance

65W Power Dissipation

Product Advantages

Excellent power efficiency

Compact 6-DSBGA packaging

Suitable for high-frequency and high-current applications

Key Technical Parameters

Vdss: 12V

Vgs(max): ±8V

Rds(on): 20mOhm @ 1.5A, 4.5V

Id: 31A @ 25°C

Ciss: 715pF @ 6V

Pd: 1.65W

Quality and Safety Features

RoHS3 compliant

Designed for reliable and safe operation

Compatibility

Industry-standard MOSFET package and pinout

Application Areas

Power conversion

Motor control

Wireless and telecom infrastructure

Industrial and consumer electronics

Product Lifecycle

Current production status

Replacement or upgrade options may be available

Key Reasons to Choose

Excellent power efficiency and performance

Compact and space-saving 6-DSBGA package

Suitable for high-frequency and high-current applications

Reliable and safe operation

Parts with Similar Specifications

The three parts on the right have similar specifications to Texas Instruments CSD13303W1015

Product Attribute CSD13303W1015 CSD13201W10 CSD13306WT CSD13202Q2
Part Number CSD13303W1015 CSD13201W10 CSD13306WT CSD13202Q2
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Power Dissipation (Max) 1.65W (Ta) 1.2W (Ta) 1.9W (Ta) 2.7W (Ta)
Series NexFET™ NexFET™ NexFET™ NexFET™
Gate Charge (Qg) (Max) @ Vgs 4.7 nC @ 4.5 V 2.9 nC @ 4.5 V 11.2 nC @ 4.5 V 6.6 nC @ 4.5 V
FET Feature - - - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Package / Case 6-UFBGA, DSBGA 4-UFBGA, DSBGA 6-UFBGA, DSBGA 6-WDFN Exposed Pad
Base Product Number CSD13303 CSD13201 CSD13306 CSD13202
Vgs(th) (Max) @ Id 1.2V @ 250µA 1.1V @ 250µA 1.3V @ 250µA 1.1V @ 250µA
Supplier Device Package 6-DSBGA (1x1.5) 4-DSBGA (1x1) 6-DSBGA (1x1.5) 6-WSON (2x2)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 1.8V, 4.5V 2.5V, 4.5V 2.5V, 4.5V
Drain to Source Voltage (Vdss) 12 V 12 V 12 V 12 V
Input Capacitance (Ciss) (Max) @ Vds 715 pF @ 6 V 462 pF @ 6 V 1370 pF @ 6 V 997 pF @ 6 V
FET Type N-Channel N-Channel N-Channel N-Channel
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Vgs (Max) ±8V ±8V ±10V ±8V
Current - Continuous Drain (Id) @ 25°C 31A (Ta) 1.6A (Ta) 3.5A (Ta) 22A (Ta)
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs 20mOhm @ 1.5A, 4.5V 34mOhm @ 1A, 4.5V 10.2mOhm @ 1.5A, 4.5V 9.3mOhm @ 5A, 4.5V

CSD13303W1015 Datasheet PDF

Download CSD13303W1015 pdf datasheets and Texas Instruments documentation for CSD13303W1015 - Texas Instruments.

PCN Packaging
Carrier Tape 28/Aug/2018.pdf
PCN Design/Specification
DSBGA/Usip 14/Sep/2016.pdf DSBGA/uSIP 22/Jun/2016.pdf

Shipment

Delivery Time

In-stock items can be shipped within 24 hours. Some parts will be arranged for delivery within 1-2 days from the date all items arrive at our warehouse. And Allelco ships order once a day at about 17:00, except Sunday. Once the goods are shipped, the estimated delivery time depends on the shipping methods and Delivery destination. The table below shows are the logistic time for some common countries.

Delivery Cost

  1. Use your express account for shipment if you have one.
  2. Use our account for the shipment. Refer to the table below for the approximate charges.
(Different time frame / countries / package size has different price.)

Delivery Method

  1. Global Common Shipment by DHL / UPS / FedEx / TNT / EMS / SF we support.
  2. Others more shipping ways, please get in touch with your customer manager.

Common Countries Logistic Time Reference
Region Country Logistic Time(Day)
America United States 5
Brazil 7
Europe Germany 5
United Kingdom 4
Italy 5
Oceania Australia 6
New Zealand 5
Asia India 4
Japan 4
Middle East Israel 6
DHL & FedEx Shipment Charges Reference
Shipment charges(KG) Reference DHL(USD$)
0.00kg-1.00kg USD$30.00 - USD$60.00
1.00kg-2.00kg USD$40.00 - USD$80.00
2.00kg-3.00kg USD$50.00 - USD$100.00
Note:
The above table is for reference only. There may have some data bias for the uncontrollable factors.
Contact us if you have any questions.

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CSD13303W1015 Image

CSD13303W1015

Texas Instruments
32D-CSD13303W1015

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