Manufacturer Part Number
CSD13201W10
Manufacturer
Texas Instruments
Introduction
High-performance N-channel NexFET power MOSFET in a compact 4-DSBGA package.
Product Features and Performance
Low on-resistance down to 34 mΩ
High current capability up to 1.6 A
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 462 pF
Compact 4-DSBGA package (1x1)
Product Advantages
Excellent power efficiency
Reduced power consumption
Space-saving design
Wide temperature tolerance
Key Technical Parameters
Drain to Source Voltage (Vdss): 12 V
Gate to Source Voltage (Vgs): ±8 V
Continuous Drain Current (Id): 1.6 A
On-Resistance (Rds(on)): 34 mΩ
Input Capacitance (Ciss): 462 pF
Power Dissipation (Max): 1.2 W
Quality and Safety Features
RoHS3 compliant
Reliable MOSFET technology
Robust design for industrial applications
Compatibility
Compatible with a wide range of electronic systems and devices
Application Areas
Suitable for power management, motor control, and other high-efficiency applications
Product Lifecycle
Currently available
No discontinuation or replacement plans
Several Key Reasons to Choose This Product
Excellent power efficiency and low power consumption
Compact and space-saving design
Wide operating temperature range for industrial applications
Reliable and robust MOSFET technology
High current capability and low on-resistance for improved performance