Manufacturer Part Number
CSD13385F5
Manufacturer
Texas Instruments
Introduction
High-performance N-channel MOSFET transistor
Product Features and Performance
Low on-resistance for high efficiency
Fast switching speed
High drain current capability
Wide operating temperature range of -55°C to 150°C
Product Advantages
Optimized for power management applications
Excellent thermal performance
Compact 3-PICOSTAR package
Key Technical Parameters
Drain to Source Voltage (Vdss): 12V
Gate to Source Voltage (Vgs) (Max): 8V
On-Resistance (Rds(on)) (Max): 19mΩ @ 900mA, 4.5V
Drain Current (Id) (Continuous) @ 25°C: 4.3A
Input Capacitance (Ciss) (Max): 674pF @ 6V
Power Dissipation (Max): 500mW
Quality and Safety Features
RoHS3 compliant
Meets stringent quality and reliability standards
Compatibility
Suitable for a wide range of power management applications
Application Areas
Power supplies
Power amplifiers
Motor drives
Battery chargers
Portable electronics
Product Lifecycle
Current product, no discontinuation planned
Replacements and upgrades available as needed
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
Compact package for space-constrained designs
Wide operating temperature range for demanding applications
Proven reliability and quality from Texas Instruments
CSD13302WTexas InstrumentsMOSFET N-CH 12V 1.6A 4DSBGA