Manufacturer Part Number
CSD16321Q5
Manufacturer
Texas Instruments
Introduction
Discrete Semiconductor Product
Single Transistor MOSFET
Product Features and Performance
MOSFET (Metal Oxide) Technology
N-Channel
25V Drain to Source Voltage
+10V/-8V Gate to Source Voltage
4mΩ Max On-Resistance @ 25A, 8V
31A Continuous Drain Current @ 25°C (Ta)
100A Continuous Drain Current @ 25°C (Tc)
3100pF Max Input Capacitance @ 12.5V
1W Max Power Dissipation @ 25°C (Ta)
19nC Max Gate Charge @ 4.5V
Product Advantages
High current handling capability
Low on-resistance
Compact 8-VSON-CLIP (5x6) package
Suitable for high-power, high-frequency applications
Key Technical Parameters
Drain to Source Voltage: 25V
Gate to Source Voltage: +10V/-8V
On-Resistance: 2.4mΩ @ 25A, 8V
Continuous Drain Current: 31A (Ta), 100A (Tc)
Input Capacitance: 3100pF @ 12.5V
Power Dissipation: 3.1W @ 25°C (Ta)
Gate Charge: 19nC @ 4.5V
Quality and Safety Features
RoHS3 Compliant
Operating Temperature: -55°C to 150°C (TJ)
Compatibility
Surface Mount Mounting
Application Areas
High-power, high-frequency applications
Switching power supplies
Motor drives
Industrial automation
Product Lifecycle
Currently in production
No indication of near discontinuation
Replacement or upgrade options may be available
Key Reasons to Choose This Product
High current handling capability
Low on-resistance for efficiency
Compact package for space-constrained designs
Suitable for demanding high-power, high-frequency applications
Proven reliability and quality from Texas Instruments
