Manufacturer Part Number
CSD16321Q5C
Manufacturer
Texas Instruments
Introduction
Single N-Channel MOSFET transistor
Product Features and Performance
Advanced NexFET technology for high efficiency and low on-resistance
Capable of handling high current up to 100A
Low input capacitance (3100pF) for fast switching
Wide operating temperature range (-55°C to 150°C)
Low gate charge (19nC) for efficient switching
Product Advantages
Excellent thermal performance and power handling
Efficient switching for power conversion applications
Compact package size (8-VSON-CLIP) for space-saving design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 25V
On-Resistance (Rds(on)): 2.4mΩ @ 25A, 8V
Continuous Drain Current (Id): 31A (Ta), 100A (Tc)
Input Capacitance (Ciss): 3100pF @ 12.5V
Power Dissipation (Pd): 3.1W (Ta)
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments with wide temperature range
Compatibility
Compatible with various power electronics and power management applications
Application Areas
Switched-mode power supplies (SMPS)
Motor drives
Inverters
Power factor correction (PFC) circuits
Battery charging systems
Product Lifecycle
Currently in production
No plans for discontinuation
Several Key Reasons to Choose This Product
High-performance NexFET technology for efficient power conversion
Capable of handling high currents up to 100A
Compact package size and wide temperature range for design flexibility
Proven reliability and performance in various power electronics applications
