Manufacturer Part Number
CSD16325Q5
Manufacturer
Texas Instruments
Introduction
High-performance N-channel NexFET power MOSFET
Product Features and Performance
Optimized for high-frequency, high-efficiency power conversion
Low on-resistance for low power loss
Fast switching speed
Low gate charge for high-frequency operation
High current capability
Product Advantages
Excellent thermal performance
Small package size
Robust design
Key Technical Parameters
Drain to Source Voltage (Vdss): 25 V
On-Resistance (Rds(on)): 2 mΩ @ 30 A, 8 V
Continuous Drain Current (Id): 33 A (Ta), 100 A (Tc)
Input Capacitance (Ciss): 4000 pF @ 12.5 V
Power Dissipation (Max): 3.1 W (Ta)
Gate Charge (Qg): 25 nC @ 4.5 V
Quality and Safety Features
RoHS3 compliant
Designed for reliable high-performance operation
Compatibility
Suitable for a wide range of power conversion applications
Application Areas
High-frequency DC-DC converters
Synchronous rectification
Power factor correction (PFC)
Motor drives
Class D audio amplifiers
Product Lifecycle
Current product, no discontinuation planned
Replacement or upgrade options available if needed
Several Key Reasons to Choose This Product
Excellent efficiency and thermal performance
High current capability in a small package
Robust design for reliable operation
Optimized for high-frequency, high-efficiency power conversion
Wide range of compatible applications
