Manufacturer Part Number
CSD16401Q5
Manufacturer
Texas Instruments
Introduction
High-performance N-channel MOSFET transistor
Product Features and Performance
Excellent power density
Low on-resistance
High-speed switching capability
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Reduced system size and weight
Improved efficiency
Reliable performance in harsh environments
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 25V
Gate-to-Source Voltage (Vgs): +16V/-12V
On-Resistance (Rds(on)): 1.6mΩ @ 40A, 10V
Continuous Drain Current (Id): 38A (Ta), 100A (Tc)
Input Capacitance (Ciss): 4100pF @ 12.5V
Power Dissipation (Max): 3.1W (Ta)
Quality and Safety Features
RoHS3 compliant
Robust design for reliable operation
Compatibility
Surface mount package (8-PowerTDFN)
Compatible with a wide range of electronic systems
Application Areas
Power management
Power conversion
Motor control
Industrial automation
Automotive electronics
Product Lifecycle
Current product offering
Replacement parts and upgrades available
Key Reasons to Choose This Product
Excellent power efficiency and performance
Compact and lightweight design
Reliable operation in harsh environments
Broad compatibility and ease of integration
Supported by a trusted manufacturer (Texas Instruments)
