Manufacturer Part Number
CSD16340Q3T
Manufacturer
Texas Instruments
Introduction
High-performance power MOSFET transistor
Part of the NexFET series
Product Features and Performance
N-channel MOSFET
25V drain-to-source voltage (Vdss)
60A continuous drain current (Id) at 25°C
5mΩ maximum on-resistance (Rds(on)) at 20A, 8V
1350pF maximum input capacitance (Ciss) at 12.5V
3W maximum power dissipation at 25°C ambient
Product Advantages
Low on-resistance for high efficiency
High current capability
Fast switching for efficient power conversion
Key Technical Parameters
-55°C to 150°C operating temperature range
+10V/-8V gate-to-source voltage (Vgs) range
1V maximum threshold voltage (Vgs(th)) at 250A
5V to 8V drive voltage range
Quality and Safety Features
RoHS3 compliant
8-VSON-CLIP (3.3x3.3) package
Compatibility
Surface mount package
Tape and reel packaging
Application Areas
Power supplies
Motor drives
Inverters
DC/DC converters
Product Lifecycle
Currently in active production
No known plans for discontinuation
Key Reasons to Choose This Product
High efficiency due to low on-resistance
High current capability for demanding applications
Fast switching for improved power conversion
Robust design with wide operating temperature range
Compact surface mount package for space-constrained designs
