Manufacturer Part Number
CSD16323Q3
Manufacturer
Texas Instruments
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
RoHS3 Compliant
8-VSON-CLIP (3.3x3.3) package
NexFET series
Tape & Reel (TR) package
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +10V, -8V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 24A, 8V
MOSFET (Metal Oxide) Technology
Current Continuous Drain (Id) @ 25°C: 21A (Ta), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 12.5 V
Power Dissipation (Max): 3W (Ta)
N-Channel FET Type
Vgs(th) (Max) @ Id: 1.4V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V
Surface Mount Mounting Type
Product Advantages
RoHS3 Compliant
Compact 8-VSON-CLIP (3.3x3.3) package
Wide operating temperature range
Low on-resistance and high current capability
Suitable for various power conversion and control applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +10V, -8V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 24A, 8V
Current Continuous Drain (Id) @ 25°C: 21A (Ta), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 12.5 V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V
Quality and Safety Features
RoHS3 Compliant
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Power conversion
Motor control
Lighting control
Industrial applications
Product Lifecycle
Currently in production
Replacement/upgrade options may be available in the future
Key Reasons to Choose This Product
RoHS3 compliance for environmental friendliness
Compact 8-VSON-CLIP (3.3x3.3) package for space-constrained designs
Wide operating temperature range for versatile applications
Low on-resistance and high current capability for efficient power handling
Suitable for a variety of power conversion and control applications