IXGR40N60C2D1 - IXYS

Manufacturer Part Number

IXGR40N60C2D1

Manufacturer

IXYS Corporation

Introduction

High-performance IGBT transistor with fast switching and low power loss characteristics.

Product Features and Performance

IGBT with PT structure

Wide operating temperature range of -55°C to 150°C

High power rating of 170W

High breakdown voltage of 600V

High collector current rating of 56A

Low on-state voltage drop of 2.7V

Fast switching with 25ns reverse recovery time

Low gate charge of 95nC

High pulsed collector current of 200A

Fast turn-on and turn-off times of 18ns and 90ns respectively

Product Advantages

High efficiency due to low power losses

Robust design with wide operating temperature range

Suitable for high power switching applications

Fast switching enables high-frequency operation

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 600V

Current Collector (Ic) (Max): 56A

Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A

Reverse Recovery Time (trr): 25ns

Gate Charge: 95nC

Current Collector Pulsed (Icm): 200A

Td (on/off) @ 25°C: 18ns/90ns

Quality and Safety Features

ISOPLUS247 package for improved thermal performance and reliability

Compliance with relevant safety and quality standards

Compatibility

Compatible with standard IGBT gate drivers and control circuits

Application Areas

High-frequency power conversion

Motor drives

Induction heating

Welding equipment

Uninterruptible power supplies (UPS)

Product Lifecycle

Currently in active production

No information on planned discontinuation or availability of replacements/upgrades

Key Reasons to Choose This Product

Excellent efficiency and low power losses due to fast switching and low on-state voltage

Robust design with wide operating temperature range

Suitable for high-power, high-frequency switching applications

Reliable performance and safety features provided by the ISOPLUS247 package