Manufacturer Part Number
IXGR40N60C
Manufacturer
IXYS Corporation
Introduction
High-performance IGBT (Insulated Gate Bipolar Transistor) for power electronics applications
Product Features and Performance
Optimized for high-speed, low-loss switching
Capable of handling up to 200W of power
Operates in a wide temperature range of -55°C to 150°C
Product Advantages
Fast switching with low conduction losses
Robust and reliable performance
Suitable for a variety of power conversion applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage (max): 600V
Collector Current (max): 75A
Collector-Emitter Saturation Voltage (max): 2.7V @ 15V, 40A
Gate Charge: 116nC
Switching Energy (off): 850μJ
Switching Times (on/off): 25ns/100ns
Quality and Safety Features
ISOPLUS247 package for enhanced thermal performance and reliability
Designed and manufactured to meet industry safety standards
Compatibility
Suitable for a wide range of power electronics applications, including inverters, converters, and motor drives
Application Areas
Industrial power electronics
Renewable energy systems
Electric vehicle propulsion
Home appliances and HVAC systems
Product Lifecycle
Currently in production, with no immediate plans for discontinuation
Replacement or upgrade options available from the manufacturer
Several Key Reasons to Choose This Product
Exceptional power handling and switching performance
Robust and reliable design for harsh operating environments
Compatibility with a broad range of power electronics applications
Backed by the expertise and support of IXYS Corporation