Manufacturer Part Number
IXGQ90N33TCD1
Manufacturer
IXYS Corporation
Introduction
High-power, high-voltage IGBT transistor with trench technology
Product Features and Performance
Power handling capability up to 200W
Trench IGBT design for high efficiency and low on-state voltage
High voltage rating of 330V collector-emitter breakdown voltage
High current handling up to 90A collector current
Low collector-emitter saturation voltage of 1.8V at 15V gate-emitter voltage and 45A collector current
Low gate charge of 69nC for fast switching
Product Advantages
Efficient power conversion with low conduction and switching losses
Compact and robust design in TO-3P package
Suitable for high-power industrial and automotive applications
Key Technical Parameters
Power Rating: 200W
Collector-Emitter Breakdown Voltage: 330V
Collector Current: 90A
Collector-Emitter Saturation Voltage: 1.8V
Gate Charge: 69nC
Quality and Safety Features
Trench IGBT technology for high reliability and ruggedness
TO-3P package provides good thermal dissipation
Compatibility
Through-hole mounting compatible with standard TO-3P footprint
Application Areas
High-power industrial equipment
Motor drives
Inverters
Power supplies
Welding equipment
Product Lifecycle
This product is currently in production and widely available
No immediate plans for discontinuation, with ongoing support and availability of replacements
Several Key Reasons to Choose This Product
Excellent power handling and high-voltage capability
Efficient trench IGBT design for low losses
Robust and reliable construction in industry-standard TO-3P package
Suitable for a wide range of high-power industrial and automotive applications
IXGQ240N30PAIXYS / Littelfuse