Manufacturer Part Number
IXGQ20N120B
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
Transistors IGBTs Single
Product Features and Performance
ROHS3 Compliant
TO-3P Package
Operating Temperature: -55°C ~ 150°C (TJ)
Power Rating: 190 W
IGBT Type: PT
Collector-Emitter Breakdown Voltage: 1200 V
Collector Current (Max): 40 A
Collector-Emitter Saturation Voltage: 3.4 V @ 15 V, 20 A
Reverse Recovery Time: 40 ns
Gate Charge: 62 nC
Pulsed Collector Current: 100 A
Turn-on/off Delay Time: 20 ns/270 ns
Through Hole Mounting
Product Advantages
High voltage and current handling capability
Low conduction and switching losses
Fast switching speed
Robust design for harsh environments
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 1200 V
Collector Current (Max): 40 A
Collector-Emitter Saturation Voltage: 3.4 V @ 15 V, 20 A
Reverse Recovery Time: 40 ns
Gate Charge: 62 nC
Quality and Safety Features
ROHS3 Compliant
Designed for reliable operation in high-temperature environments
Compatibility
Compatible with standard IGBT gate drive circuits
Application Areas
Power electronics
Motor drives
Inverters
Welding equipment
Induction heating
Uninterruptible power supplies (UPS)
Product Lifecycle
Current production model
Replacements and upgrades available
Key Reasons to Choose This Product
High voltage and current handling capability
Low conduction and switching losses
Fast switching speed
Robust design for harsh environments
ROHS3 compliant
Compatibility with standard IGBT gate drive circuits
Suitable for a wide range of power electronics applications