IXGQ85N33PCD1 - IXYS

Manufacturer Part Number

IXGQ85N33PCD1

Manufacturer

IXYS Corporation

Introduction

This product is a discrete semiconductor device, specifically an IGBT (Insulated Gate Bipolar Transistor) in a single package.

Product Features and Performance

Operating temperature range of -55°C to 150°C (TJ)

Maximum power rating of 150 W

Collector-Emitter Breakdown Voltage (Vceo) of 330 V (maximum)

Collector Current (Ic) of 85 A (maximum)

On-state voltage (Vce(on)) of 3 V @ 15 V, 100 A

Reverse Recovery Time (trr) of 250 ns

Gate Charge of 80 nC

Standard input type

Through-hole mounting

Product Advantages

High power handling capability

Reliable operation over a wide temperature range

Low on-state voltage for efficient power conversion

Fast switching performance

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Vceo): 330 V (max)

Collector Current (Ic): 85 A (max)

On-state voltage (Vce(on)): 3 V @ 15 V, 100 A

Reverse Recovery Time (trr): 250 ns

Gate Charge: 80 nC

Quality and Safety Features

RoHS3 compliant

TO-3P package

Compatibility

This IGBT is compatible with various power electronics applications and systems.

Application Areas

Motor drives

Power converters

Switching power supplies

Uninterruptible power supplies (UPS)

Industrial automation and control

Product Lifecycle

This IGBT product is currently in production and available for purchase. There are no indications of it being discontinued in the near future. Replacement or upgrade options may be available from the manufacturer.

Several Key Reasons to Choose This Product

High power handling capability for demanding applications

Reliable operation across a wide temperature range

Low on-state voltage for improved energy efficiency

Fast switching performance for high-frequency power conversion

RoHS3 compliance for environmental responsibility

Widely compatible with various power electronics systems and applications