Manufacturer Part Number
IXGR35N120C
Manufacturer
IXYS Corporation
Introduction
High-performance IGBT transistor
Designed for power conversion and motor control applications
Product Features and Performance
1200V collector-emitter breakdown voltage
70A maximum collector current
200W maximum power rating
High switching speed with 50ns turn-on and 150ns turn-off time
Low Vce(on) of 4V @ 15V, 35A
170nC gate charge
Product Advantages
High efficiency and low power losses
Fast switching capability
Robust and reliable performance
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 1200V
Current Collector (Ic) (Max): 70A
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 35A
Gate Charge: 170nC
Current Collector Pulsed (Icm): 140A
Td (on/off) @ 25°C: 50ns/150ns
Quality and Safety Features
Designed and manufactured to high-quality standards
Meets safety and regulatory requirements
Compatibility
Compatible with various power conversion and motor control applications
Application Areas
Power inverters
Motor drives
Welding equipment
Uninterruptible power supplies (UPS)
Industrial automation and control systems
Product Lifecycle
This is an active product, not nearing discontinuation
Replacement or upgraded models may be available in the future
Key Reasons to Choose This Product
High efficiency and low power losses for improved system performance
Fast switching capability for high-speed applications
Robust and reliable design for long-term operation
Compatibility with a wide range of power conversion and motor control systems
Meets high-quality and safety standards for industrial applications