IXGR50N60B - IXYS

Manufacturer Part Number

IXGR50N60B

Manufacturer

IXYS Corporation

Introduction

High-performance IGBT transistor for power electronics applications

Product Features and Performance

High-speed and low-loss switching

Wide operating temperature range of -55°C to 150°C

High power handling capacity of up to 250W

High breakdown voltage of 600V

High collector current of up to 75A

Low on-state voltage drop of 2.5V at 15V, 50A

Fast turn-on and turn-off times of 50ns and 110ns respectively

High gate charge of 110nC

Product Advantages

Excellent power conversion efficiency

Compact and reliable design

Suitable for high-power, high-frequency applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 600V

Collector Current (max): 75A

Collector Current Pulsed (max): 200A

On-state Voltage Drop (max): 2.5V

Gate Charge: 110nC

Switching Energy (turn-off): 3mJ

Quality and Safety Features

Rated for high temperature operation up to 150°C

Robust and reliable ISOPLUS247 package

Compatibility

Compatible with a wide range of power electronics applications

Application Areas

Switch-mode power supplies

Motor drives

Inverters

Uninterruptible power supplies (UPS)

Renewable energy systems

Product Lifecycle

This product is currently in production and widely available

Replacements and upgrades may be available in the future as technology advances

Key Reasons to Choose This Product

High power density and efficiency for compact, high-performance power electronics

Excellent switching characteristics for fast, low-loss power conversion

Robust and reliable design for demanding industrial applications

Wide temperature range and high power handling capacity