Manufacturer Part Number
IXGR60N60U1
Manufacturer
IXYS Corporation
Introduction
The IXGR60N60U1 is a discrete semiconductor product, specifically an IGBT (Insulated Gate Bipolar Transistor) transistor from IXYS Corporation.
Product Features and Performance
600V Collector-Emitter Breakdown Voltage
75A Collector Current (Max)
7V Collector-Emitter Saturation Voltage @ 15V Gate-Emitter, 60A Collector Current
200ns Turn-Off Delay Time
16mJ Turn-Off Switching Energy
300W Maximum Power Dissipation
-55°C to 150°C Operating Temperature Range
Product Advantages
High power handling capability
Low conduction and switching losses
Fast switching speed
Robust design for high reliability
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600V
Current Collector (Ic) (Max): 75A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
Gate Charge: 200nC
Current Collector Pulsed (Icm): 200A
Switching Energy: 16mJ (off)
Td (on/off) @ 25°C: 50ns/600ns
Quality and Safety Features
ISOPLUS247 package for improved thermal performance and reliability
Designed and manufactured to high quality standards
Compatibility
Through-hole mounting for easy integration into various applications
Application Areas
Power electronics
Motor drives
Inverters
Power supplies
Welding equipment
Induction heating
Product Lifecycle
Currently in active production
Replacements or upgrades may be available in the future as technology advances
Key Reasons to Choose This Product
High power handling and efficiency
Fast switching speed for improved system performance
Robust and reliable design
Compatibility with a wide range of applications
Availability and support from a reputable manufacturer (IXYS Corporation)
IXGX120N60IXYS / Littelfuse
IXGX120N60BIXYSIGBT 600V 200A 660W TO247