IXGR60N60U1 - IXYS

Manufacturer Part Number

IXGR60N60U1

Manufacturer

IXYS Corporation

Introduction

The IXGR60N60U1 is a discrete semiconductor product, specifically an IGBT (Insulated Gate Bipolar Transistor) transistor from IXYS Corporation.

Product Features and Performance

600V Collector-Emitter Breakdown Voltage

75A Collector Current (Max)

7V Collector-Emitter Saturation Voltage @ 15V Gate-Emitter, 60A Collector Current

200ns Turn-Off Delay Time

16mJ Turn-Off Switching Energy

300W Maximum Power Dissipation

-55°C to 150°C Operating Temperature Range

Product Advantages

High power handling capability

Low conduction and switching losses

Fast switching speed

Robust design for high reliability

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 600V

Current Collector (Ic) (Max): 75A

Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A

Gate Charge: 200nC

Current Collector Pulsed (Icm): 200A

Switching Energy: 16mJ (off)

Td (on/off) @ 25°C: 50ns/600ns

Quality and Safety Features

ISOPLUS247 package for improved thermal performance and reliability

Designed and manufactured to high quality standards

Compatibility

Through-hole mounting for easy integration into various applications

Application Areas

Power electronics

Motor drives

Inverters

Power supplies

Welding equipment

Induction heating

Product Lifecycle

Currently in active production

Replacements or upgrades may be available in the future as technology advances

Key Reasons to Choose This Product

High power handling and efficiency

Fast switching speed for improved system performance

Robust and reliable design

Compatibility with a wide range of applications

Availability and support from a reputable manufacturer (IXYS Corporation)