Manufacturer Part Number
IXGX120N60B
Manufacturer
IXYS Corporation
Introduction
High performance IGBT (Insulated Gate Bipolar Transistor) suitable for high power applications
Product Features and Performance
High current handling capacity up to 200A
High voltage rating up to 600V
Low on-state voltage drop of 2.1V
Fast switching with turn-on/off times of 60ns/200ns
Low switching losses with 2.4mJ turn-on and 5.5mJ turn-off energies
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent efficiency and reliability for high power applications
Suitable for various industrial and power conversion systems
Key Technical Parameters
IGBT Type: PT (Punch-Through)
Collector-Emitter Breakdown Voltage: 600V
Collector Current (max): 200A
Pulsed Collector Current: 300A
On-state Voltage Drop (max): 2.1V
Gate Charge: 350nC
Switching Times: 60ns (turn-on), 200ns (turn-off)
Quality and Safety Features
Robust industrial-grade construction
Designed for reliable and safe operation
Compatibility
TO-247-3 package with PLUS247-3 variant
Application Areas
Industrial motor drives
Power inverters and converters
Welding equipment
Uninterruptible Power Supplies (UPS)
Induction heating systems
Product Lifecycle
This product is currently in active production
Replacement or upgrade options may be available from IXYS Corporation
Key Reasons to Choose This Product
High power handling capability
Efficient and reliable performance
Fast switching characteristics
Wide operating temperature range
Proven industrial-grade quality and safety
IXGR60N60C3D1IXYSIGBT 600V 75A 170W ISOPLUS247
IXGT30N60C3D1IXYS / Littelfuse