Manufacturer Part Number
IXGX50N60AU1
Manufacturer
IXYS Corporation
Introduction
High-performance IGBT transistor for industrial and power electronics applications
Product Features and Performance
High voltage rating up to 600V
High current rating up to 75A
Fast switching speed with reverse recovery time of 50ns
Low on-state voltage of 2.7V at 50A
Wide operating temperature range of -55°C to 150°C
High power handling capability up to 300W
Product Advantages
Efficient power conversion with low conduction and switching losses
Reliable and robust design for industrial applications
Compact and easy to integrate into power systems
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 600V
Collector Current: 75A
Collector-Emitter Saturation Voltage: 2.7V
Reverse Recovery Time: 50ns
Gate Charge: 200nC
Pulse Collector Current: 200A
Switching Energy: 4.8mJ
Quality and Safety Features
Qualified to industrial standards for reliability and safety
Rugged TO-247 package for thermal management and protection
Compatibility
Suitable for use in various power electronics applications such as motor drives, power supplies, and inverters
Application Areas
Industrial automation and control
Power conversion and conditioning
Renewable energy systems
Electric vehicles and transportation
Product Lifecycle
This product is an active and widely used IGBT transistor
Replacement and upgrade options are available from the manufacturer
Several Key Reasons to Choose This Product
High performance and efficiency for power conversion applications
Reliable and robust design for industrial environments
Easy integration into power systems due to compact package
Wide operating temperature range and high power handling capability
Proven track record and support from the manufacturer