IXGX60N60C2D1 - IXYS

Manufacturer Part Number

IXGX60N60C2D1

Manufacturer

IXYS Corporation

Introduction

High-performance insulated gate bipolar transistor (IGBT)

Suitable for high-power switching applications

Product Features and Performance

High-speed switching capability

Low conduction and switching losses

Wide operating temperature range (-55°C to 150°C)

High power handling capability (480W max)

Fast reverse recovery time (35ns)

Low gate charge (146nC)

High collector current (75A max, 300A pulsed)

Product Advantages

Efficient power conversion

Reliable and durable performance

Suitable for various high-power applications

Key Technical Parameters

Collector-Emitter Voltage: 600V

Collector Current: 75A (max), 300A (pulsed)

Vce(on): 2.5V @ 15V, 50A

Reverse Recovery Time: 35ns

Gate Charge: 146nC

Switching Energy: 400J (on), 480J (off)

Switching Times: 18ns (turn-on), 95ns (turn-off)

Quality and Safety Features

Designed for high reliability and safety

Suitable for industrial and automotive applications

Compatibility

Compatible with standard IGBT gate drive circuits

Application Areas

Power conversion and control systems

Motor drives

Inverters

Welding equipment

UPS systems

Renewable energy systems

Product Lifecycle

Current product, not nearing discontinuation

Replacement or upgrade options available from the manufacturer

Key Reasons to Choose This Product

High-performance and efficient power switching capability

Wide operating temperature range for versatile applications

Fast switching speeds and low losses for improved system efficiency

Reliable and durable design for industrial and automotive use

Compatibility with standard IGBT gate drive circuits for easy integration