Manufacturer Part Number
IXGX60N60C2D1
Manufacturer
IXYS Corporation
Introduction
High-performance insulated gate bipolar transistor (IGBT)
Suitable for high-power switching applications
Product Features and Performance
High-speed switching capability
Low conduction and switching losses
Wide operating temperature range (-55°C to 150°C)
High power handling capability (480W max)
Fast reverse recovery time (35ns)
Low gate charge (146nC)
High collector current (75A max, 300A pulsed)
Product Advantages
Efficient power conversion
Reliable and durable performance
Suitable for various high-power applications
Key Technical Parameters
Collector-Emitter Voltage: 600V
Collector Current: 75A (max), 300A (pulsed)
Vce(on): 2.5V @ 15V, 50A
Reverse Recovery Time: 35ns
Gate Charge: 146nC
Switching Energy: 400J (on), 480J (off)
Switching Times: 18ns (turn-on), 95ns (turn-off)
Quality and Safety Features
Designed for high reliability and safety
Suitable for industrial and automotive applications
Compatibility
Compatible with standard IGBT gate drive circuits
Application Areas
Power conversion and control systems
Motor drives
Inverters
Welding equipment
UPS systems
Renewable energy systems
Product Lifecycle
Current product, not nearing discontinuation
Replacement or upgrade options available from the manufacturer
Key Reasons to Choose This Product
High-performance and efficient power switching capability
Wide operating temperature range for versatile applications
Fast switching speeds and low losses for improved system efficiency
Reliable and durable design for industrial and automotive use
Compatibility with standard IGBT gate drive circuits for easy integration
IXGX120N60IXYS / Littelfuse