IXGX50N60C2D1 - IXYS

Manufacturer Part Number

IXGX50N60C2D1

Manufacturer

IXYS Corporation

Introduction

This product is a high-performance, single IGBT (Insulated Gate Bipolar Transistor) from the IXYS Corporation's HiPerFAST series.

Product Features and Performance

Operating temperature range of -55°C to 150°C (TJ)

Power rating of 480 W

Collector-Emitter breakdown voltage of 600 V

Maximum collector current of 75 A

Low on-state voltage (Vce(on)) of 2.5 V at 15 V gate voltage and 40 A collector current

Fast reverse recovery time (trr) of 35 ns

Gate charge of 138 nC

Pulsed collector current (Icm) of 300 A

Turn-on and turn-off delays (Td) of 18 ns and 115 ns, respectively, at 25°C

Product Advantages

High-speed switching performance

High power density

Robust design for harsh environments

Suitable for a wide range of industrial and power conversion applications

Key Technical Parameters

IGBT type: PT (Punch-Through)

Packaging: TO-247-3 Variant

Supplier device package: PLUS247-3

Quality and Safety Features

Designed and manufactured to meet high-quality and reliability standards

Complies with relevant safety regulations and certifications

Compatibility

This IGBT is compatible with a wide range of industrial and power conversion applications, including:

Motor drives

Power supplies

Inverters

Switching power converters

Application Areas

Industrial automation

Renewable energy systems

Electric vehicles

Home appliances

Power electronics

Product Lifecycle

This IGBT is an active product in IXYS Corporation's portfolio and is not nearing discontinuation. Replacement or upgrade options may be available as technology evolves.

Key Reasons to Choose This Product

High-performance switching characteristics for efficient power conversion

Robust design for reliable operation in harsh environments

Compatibility with a wide range of industrial and power conversion applications

Backed by IXYS Corporation's expertise and quality standards