Manufacturer Part Number
IXGX50N60C2D1
Manufacturer
IXYS Corporation
Introduction
This product is a high-performance, single IGBT (Insulated Gate Bipolar Transistor) from the IXYS Corporation's HiPerFAST series.
Product Features and Performance
Operating temperature range of -55°C to 150°C (TJ)
Power rating of 480 W
Collector-Emitter breakdown voltage of 600 V
Maximum collector current of 75 A
Low on-state voltage (Vce(on)) of 2.5 V at 15 V gate voltage and 40 A collector current
Fast reverse recovery time (trr) of 35 ns
Gate charge of 138 nC
Pulsed collector current (Icm) of 300 A
Turn-on and turn-off delays (Td) of 18 ns and 115 ns, respectively, at 25°C
Product Advantages
High-speed switching performance
High power density
Robust design for harsh environments
Suitable for a wide range of industrial and power conversion applications
Key Technical Parameters
IGBT type: PT (Punch-Through)
Packaging: TO-247-3 Variant
Supplier device package: PLUS247-3
Quality and Safety Features
Designed and manufactured to meet high-quality and reliability standards
Complies with relevant safety regulations and certifications
Compatibility
This IGBT is compatible with a wide range of industrial and power conversion applications, including:
Motor drives
Power supplies
Inverters
Switching power converters
Application Areas
Industrial automation
Renewable energy systems
Electric vehicles
Home appliances
Power electronics
Product Lifecycle
This IGBT is an active product in IXYS Corporation's portfolio and is not nearing discontinuation. Replacement or upgrade options may be available as technology evolves.
Key Reasons to Choose This Product
High-performance switching characteristics for efficient power conversion
Robust design for reliable operation in harsh environments
Compatibility with a wide range of industrial and power conversion applications
Backed by IXYS Corporation's expertise and quality standards