IXGT32N170 - IXYS

Manufacturer Part Number

IXGT32N170

Manufacturer

IXYS Corporation

Introduction

Discrete Semiconductor Product

Single Transistor IGBT

Product Features and Performance

RoHS3 Compliant

TO-268AA Package

Operating Temperature Range: -55°C to 150°C

Power Rating: 350W

IGBT Type: NPT

Collector-Emitter Breakdown Voltage: 1700V (Max)

Collector Current: 75A (Max)

Collector-Emitter Saturation Voltage: 3.3V @ 15V, 32A

Gate Charge: 155nC

Pulsed Collector Current: 200A

Turn-On/Turn-Off Delay Time: 45ns/270ns

Product Advantages

High power and voltage handling capability

Low conduction and switching losses

Suitable for high-power switching applications

Key Technical Parameters

Voltage Rating: 1700V

Current Rating: 75A

Power Rating: 350W

Package: TO-268AA

Quality and Safety Features

RoHS3 Compliant

Suitable for high-temperature operation up to 150°C

Compatibility

Surface mount package

Compatible with various high-power switching applications

Application Areas

Power supplies

Motor drives

Inverters

Welding equipment

Induction heating

Other high-power switching applications

Product Lifecycle

Currently in production

Replacement or upgrade options available if needed

Key Reasons to Choose This Product

High voltage and current handling capability

Low conduction and switching losses for improved efficiency

Suitable for a wide range of high-power switching applications

RoHS3 compliant for environmental compliance

Reliable performance in high-temperature conditions