Manufacturer Part Number
IXGX32N170H1
Manufacturer
IXYS Corporation
Introduction
High-power, high-voltage IGBT (Insulated Gate Bipolar Transistor) for industrial and power electronics applications
Product Features and Performance
NPT (Non-Punch Through) IGBT structure
Collector-Emitter Voltage (VCE) up to 1700V
Collector Current (IC) up to 75A
Fast switching with turn-on time of 45ns and turn-off time of 270ns
Low conduction losses with VCE(on) of 3.3V @ 15V, 32A
Reverse Recovery Time (trr) of 150ns
Compact TO-247-3 package
Product Advantages
High voltage and current handling capability
Fast switching performance
Low conduction and switching losses
Compact and reliable package
Key Technical Parameters
Voltage Collector Emitter Breakdown (VCE,BR): 1700V
Current Collector (IC): 75A
Vce(on) @ Vge, Ic: 3.3V @ 15V, 32A
Reverse Recovery Time (trr): 150ns
Gate Charge: 155nC
Current Collector Pulsed (ICM): 200A
Quality and Safety Features
Operating Temperature range: -55°C to 150°C
Robust TO-247-3 package for reliable operation
Compatibility
Standard IGBT gate drive requirements
Application Areas
Industrial motor drives
Power supplies
Inverters
Welding equipment
UPS systems
Traction and transportation applications
Product Lifecycle
This product is an active and widely used IGBT from IXYS. Replacement and upgrade options are available.
Key Reasons to Choose This Product
High voltage and current handling capability for demanding power electronics applications
Fast switching performance for improved efficiency
Low conduction and switching losses for reduced power dissipation
Compact and reliable TO-247-3 package
Extensive application range in industrial and power electronics systems
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