IXGX60N60B2D1 - IXYS

Manufacturer Part Number

IXGX60N60B2D1

Manufacturer

IXYS Corporation

Introduction

This product is a single Insulated Gate Bipolar Transistor (IGBT) from the IXYS HiPerFAST series.

Product Features and Performance

Operating temperature range: -55°C to 150°C (TJ)

Maximum power: 500 W

IGBT type: PT (Punch-Through)

Collector-Emitter Breakdown Voltage (max): 600 V

Collector Current (max): 75 A

Collector-Emitter Saturation Voltage (max): 1.8 V @ 15 V, 50 A

Reverse Recovery Time (trr): 35 ns

Gate Charge: 170 nC

Pulsed Collector Current (max): 300 A

Switching Energy: 1 mJ (off)

Turn-on/off Delay Time: 28 ns / 160 ns

Product Advantages

High power handling capability

Fast switching performance

Low conduction losses

Robust design for reliable operation

Key Technical Parameters

Voltage Rating: 600 V

Current Rating: 75 A

Package: TO-247-3

Quality and Safety Features

Compliant with industry standards

Rigorous quality control and testing

Compatibility

Designed for a wide range of industrial and power electronics applications

Application Areas

Motor drives

Power supplies

Inverters

Welding equipment

Lighting ballasts

Product Lifecycle

This product is an active and current offering from IXYS Corporation. Replacements and upgrades may be available in the future.

Key Reasons to Choose This Product

High power handling capability up to 500 W

Fast switching performance with low switching losses

Robust design for reliable operation in harsh environments

Compatibility with a wide range of industrial and power electronics applications

Backed by IXYS Corporation's quality and reliability standards