IXGR50N60BD1 - IXYS

Manufacturer Part Number

IXGR50N60BD1

Manufacturer

IXYS Corporation

Introduction

High-performance Insulated Gate Bipolar Transistor (IGBT)

Product Features and Performance

High power density

Fast switching speed

Low conduction losses

High efficiency

Robust and reliable

Product Advantages

Excellent thermal management

Compact design

Easy integration

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 600 V

Current Collector (Ic) (Max): 75 A

Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A

Reverse Recovery Time (trr): 35 ns

Gate Charge: 110 nC

Current Collector Pulsed (Icm): 200 A

Td (on/off) @ 25°C: 50ns/110ns

Quality and Safety Features

Operating Temperature: -55°C ~ 150°C (TJ)

Power Max: 250 W

Robust design for harsh environments

Compatibility

Suitable for a wide range of industrial applications

Application Areas

Power supplies

Motor drives

Inverters

Converters

Welding equipment

Product Lifecycle

This product is currently available and not nearing discontinuation.

Replacement or upgrade options may be available from the manufacturer.

Key Reasons to Choose This Product

High-performance and reliable IGBT

Fast switching speed and low conduction losses for efficient operation

Compact and easy to integrate design

Robust and suitable for harsh environments

Wide range of industrial applications